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文件：81.24 Kbytes 页数：1 Pages

ASSMANNAssmann Electronics Inc.

阿斯曼电子

N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=20mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TSSOP-8 Packages • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Po

文件：130.509 Kbytes 页数：10 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=20mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TSSOP-8 Packages • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Po

文件：122.6 Kbytes 页数：10 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=20mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TSSOP-8 Packages • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Po

文件：122.6 Kbytes 页数：10 Pages

ANPEC

茂达电子