Cat.6 UTP Patch Cable

文件：59.8 Kbytes 页数：1 Pages

ASSMANNAssmann Electronics Inc.

阿斯曼电子

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

文件：47.09 Kbytes 页数：3 Pages

HP

安捷伦

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

文件：47.09 Kbytes 页数：3 Pages

HP

安捷伦

Gallium Arsenide CATV Amplifier Module

Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module • RoHS Compliant Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology • Unconditionally Stable Under

文件：70.84 Kbytes 页数：5 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体