ADUM4120CRIZ-RL

Isolated, Precision Gate Drivers with 2 A Output

AK4120

SampleRateConverterwithMixerandVolume

AK4120VF

SampleRateConverterwithMixerandVolume

AKD4120

SampleRateConverterwithMixerandVolume

AOD4120

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD4120usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD4120isPb-free(meetsROHS&Sony259specifications).AO

AOD4120

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=25A@TC=25℃ •DrainSourceVoltage- :VDSS=20V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max) •100avalanchetested •MinimumLot-to-Lot

AOD4120

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=20V,ID=45A,RDS(ON)

AOD4120

N-ChannelEnhancementModeFieldEffectTransistor

AOI4120

N-Channel30-V(D-S)MOSFET

AOI4120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=53A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC