ARS1412

3GHzMICROWAVERELAYSMiniaturesizeLineupincludes50/75廓type

FEATURES 1.Superminiaturedesign 14×8.6×7.2mm.551×.339×.283inch (standardPCboardterminal) 2.Lineupincludessilenttype.(75Ωtypeonly) Operationnoise(Unit:dB) 3.Excellenthighfrequencycharacteristics 4.Lineupincludessurface-mountterminaltype E

ASPK1412

SwingPanelKitincl.Panel

B1412

PNPSiliconLowFrequencyTransistor

Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118

B1412

LowFrequencyTransistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

B1412

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications.

B1412

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES PowerAmplifierApplications

B1412

iscSiliconNPNPowerTransistor

DESCRIPTION •Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifie

B1412

PNPEPITAXIALPLANARTRANSISTOR

Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat)

B1412

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

BURNDY_YF1412ID

ElectCuSingleInsulWireFerrules,SmoothFunnelEntry,14AWG,0.71L,TinPlated,Blue,ForuseonCuCond.