TK8A60DA

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.8Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=4.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK8A60DA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK8A60DA

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TK8A60W

MOSFETsSiliconN-ChannelMOS(DTMOS??

WTD8A60

Bi-DirectionalTriodeThyristor

WTF8A60-S

Bi-DirectionalTriodeThyristor

WTPB8A60CW

Bi-DirectionalTriodeThyristor

WTPB8A60TW

Bi-DirectionalTriodeThyristor