C945L

GENERALPURPOSETRANSISTORNPN200mW150mA50V

DESCRIPTION The C945isavailableinSOT23package FEATURES PowerDissipation PCM:0.2W(Tamb=25°C) CollectorCurrent ICM:0.15A Collector-BaseVoltage V(BR)CBO:60V OperatingandStorageJunctionTemperatureRange TJ,TSTG:-55°Cto+150°C AvailableinSOT23packag

C945P

NPNSiliconPlanarEpitaxialTransistor

NPNSILICONPLANAREPITAXIALTRANSISTOR 2SC945ISANNPNSILICONPLANAREPITAXIALTRANSISTORDESIGNEDFORAUDIOFREQUENCYAMPLIFIER.ITISCOMPLEMENTARYTOTHEPNPTYPE2SA733.

C945P

NPNgeneralpurposetransistor

DESCRIPTION NPNtransistorinaTO-92(SOT54)plasticpackage.PNPcomplement:2PA733. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.50V). APPLICATIONS •Generalpurposeswitchingandamplification.

C945P

HighVoltage

DESCRIPTION ·HighVoltage ·ExcellenthFElinearity APPLICATIONS ·DsignedforuseindriverstageofAFamplifierandlowspeedswitching

C945P

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description DesignedforuseindriverstageofAFamplifierapplications

C945P

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity. :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •LowNoise:NF=1dB(Typ.).atf=1kHz •ComplementarytoKTA733.

C945P

NPNSiliconTransistor(AFamplifierandlowspeedswitching)

DESCRIPTION The2SC945isdesignedforuseindriverstageofAFamplifierandlowspeedswitching.

C945T

Plastic-EncapsulateTransistor

CCSS-945

SineWaveClockOscillator

CDLL945

TEMPERATURECOMPENSATEDZENERREFERENCEDIODES

•1N941BUR-1,1N943BUR-1,1N944BUR-1AND1N945BUR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/157 •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •11.7VOLTNOMINALZENERVOLTAGE •METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION