ADRF5545ABCPZN-R7RF/IF射频/中频RFID的射频前端（LNA+PA）规格书PDF中文资料

ADRF5545ABCPZN-R7属于RF/IF射频/中频RFID的射频前端（LNA+PA）。由亚德诺半导体技术有限公司制造生产的ADRF5545ABCPZN-R7射频前端（LNA + PA）本系列中的产品是各种集成电路，其中集成了射频 (RF) 信号链连接到系统天线的部分中常见的一种或多种功能，如低噪声放大器 (LNA) 和可编程放大器 (PA)。任何给定器件所含的实际功能各不相同，相比旨在提供更高应用灵活性的器件，针对相对较窄应用的器件通常集成更大一部分必要的信号链。

FEATURES

Integrated dual-channel RF front end

2-stage LNA and high power SPDT switch

On-chip bias and matching

Single supply operation

Gain

High gain mode: 32 dB typical at 3.6 GHz

Low gain mode: 16 dB typical at 3.6 GHz

Low noise figure

High gain mode: 1.45 dB typical at 3.6 GHz

Low gain mode: 1.45 dB typical at 3.6 GHz

High isolation

RXOUT-CHA and RXOUT-CHB: 47 dB typical

TERM-CHA and TERM-CHB: 52 dB typical

Low insertion loss: 0.65 dB typical at 3.6 GHz

High power handling at TCASE = 105°C

Full lifetime

LTE average power (9 dB PAR): 40 dBm

Single event (<10 sec operation)

LTE average power (9 dB PAR): 43 dBm

High OIP3: 32 dBm typical

Power-down mode and low gain mode for LNA

Low supply current

High gain mode: 86 mA typical at 5 V

Low gain mode: 36 mA typical at 5 V

Power-down mode: 12 mA typical at 5 V

Positive logic control

6 mm × 6 mm, 40-lead LFCSP package

APPLICATIONS

Wireless infrastructure

TDD massive multiple input and multiple output and active antenna systems

TDD-based communication systems