Die on Carrier, Silicon Digital Attenuator, 2 dB LSB, 4-Bit, 10 MHz to 60 GHz

GENERAL DESCRIPTION The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of t

文件：2.08313 Mbytes 页数：14 Pages

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载波裸片，硅数字衰减器，2 dB LSB，4位，10 MHz至60 GHz

ADRF5474是一款具有22 dB衰减控制范围和2 dB步长的4位数字衰减器，采用连接在砷化镓(GaAs)载波衬底上的硅工艺制造。该衬底集成了芯片和引线装配焊盘，且器件底部经过金属化处理并接地。\n\n 该器件的工作频率范围为10 MHz至60 GHz，在55 GHz时提供优于2.7 dB的插入损耗和出色的衰减精度。在所有状态下，ADRF5474具有23 dBm（平均值）和24 dBm（峰值）的RF输入功率处理能力。\n\n ADRF5474需要+3.3 V和−3.3 V双电源电压供电。该器件具有并行模式控制和互补金属氧化物半导体(CMOS)/低压晶体管对晶体管逻辑(LV • 超宽带频率范围：10 MHz 至 60 GHz\n\n• 衰减范围：22 dB，步长为 2 dB\n\n• 用于线焊和带状键合的焊盘\n\n• 低插入损耗\n\n• 1.3 dB 典型值，最高 20 GHz\n\n• 2.0 dB 典型值，最高 44 GHz\n\n• 2.7 dB 典型值，最高 55 GHz\n\n\n\n• 衰减精度\n\n• ±（0.3 + 1.0% 的衰减状态）通常高达 20 GHz\n\n• ±（0.4 + 4.0% 的衰减状态）通常高达 44 GHz\n\n• ±（0.4 + 6.0% 的衰减状态）通常高达 55 GHz\n\n\n\n•;

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亚德诺

Die on Carrier, Silicon Digital Attenuator, 2 dB LSB, 4-Bit, 10 MHz to 60 GHz

GENERAL DESCRIPTION The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of t

文件：2.08313 Mbytes 页数：14 Pages

AD

亚德诺

Die on Carrier, Silicon Digital Attenuator, 2 dB LSB, 4-Bit, 10 MHz to 60 GHz

GENERAL DESCRIPTION The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of t

文件：2.08313 Mbytes 页数：14 Pages

AD

亚德诺

Die on Carrier, Silicon Digital Attenuator, 2 dB LSB, 4-Bit, 10 MHz to 60 GHz

GENERAL DESCRIPTION The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of t

文件：2.08313 Mbytes 页数：14 Pages

AD

亚德诺