46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier

GENERAL DESCRIPTION The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56 typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.

文件：1.23752 Mbytes 页数：19 Pages

AD

亚德诺

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：ADPA1106 EVAL BOARD

AD

亚德诺

QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY

GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. FEATURES • Low threshold voltage of 0.7V • Low input capacitance • Low Vos 2mV typical • High input impeda

文件：34.27 Kbytes 页数：4 Pages

ALD

QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY

GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor

文件：82.82 Kbytes 页数：9 Pages

ADL

QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY

GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor

文件：106.16 Kbytes 页数：11 Pages

ALD