Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 1.9 m typ. SiC MOSFET gen.3 based

Features • AQG 324 qualified • 1200 V blocking voltage • 1.9 mΩ of typical RDS(on) • Maximum operative junction temperature TJop = 175 °C • Very low switching energy • Low inductive compact design for an higher power density • Si3N4 AMB substrate to improve thermal performance • SiC Power

文件：2.70251 Mbytes 页数：15 Pages

STMICROELECTRONICS

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Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 1.9 mOhm typ. SiC MOSFET gen.3 based

The ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electric vehicles traction inverter. This power module features switches based on silicon carbide Power MOSFET 3rd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in s • AQG 324 qualified \n• 1200 V blocking voltage \n• 1.9 mΩ of typical RDS(on) \n• Maximum operative junction temperature TJ = 175 °C \n• Very low switching energy \n• Low inductive compact design for an higher power density• Si3N4 AMB substrate to improve thermal performance \n• SiC Power MOSFET chi;

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Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 1.9 m typ. SiC MOSFET gen.3 based

Features • Designed for automotive applications • 1200 V blocking voltage • 3.5 mΩ of typical RDS(on) • Maximum operative junction temperature TJop = 175 °C • Very low switching energy • Low inductive compact design for an higher power density • Si3N4 AMB substrate to improve thermal perfor

文件：8.25524 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

ADI

上传：深圳市毅创辉电子科技有限公司

LFCSP-40

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上传：深圳市振鑫微电子科技有限公司