ADP360120W3

Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 2.55 m typ. SiC MOSFET gen.3 based

•1200Vblockingvoltage •3.5mΩoftypicalRDS(on) •MaximumoperativejunctiontemperatureTJop=175°C •Verylowswitchingenergy •Lowinductivecompactdesignforanhigherpowerdensity •Si3N4AMBsubstratetoimprovethermalperformance •SiCPowerMOSFETchipsinteredtosubstra

ADP360120W3

Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 2.55 mOhm typ. SiC MOSFET gen.3 based; • AQG 324 qualified \n• 1200 V blocking voltage \n• 2.55 mΩ of typical RDS(on) \n• Maximum operating junction temperature TJ = 175 °C \n• Very low switching energy \n• Low inductive compact design for an higher power density• Si3N4 AMB substrate to improve thermal performance \n• SiC Power MOSFET chip sintered to substrate for improved lifetime \n• 4.2 kV DC 1 s insulation \n• Directly liquid cooled base plate with pin-fins \n• Three integrated NTC temperature sensors;

The ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electric vehicles traction inverter. This power module features switches based on silicon carbide Power MOSFET 3rd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification working mode. This will ensure superb efficiency in final application, saving battery recharging cycles. \n\n A copper base plate with pin-fin base structure make direct fluid cooling available for this power module minimizing thermal resistance.\n\n A dedicated pin-out has been developed to get the best switching performances and press-fit pins will ensure optimal connection with driving board.\n\n

ADP360120W3

包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：AUTOMOTIVE-GRADE ACEPACK DRIVE P