Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 3.8 m typ. SiC MOSFET gen.3 based

•AQG 324 qualified • 1200 V blocking voltage • 3.5 mΩ of typical RDS(on) • Maximum operative junction temperature TJop = 175 °C • Very low switching energy • Low inductive compact design for an higher power density • Si3N4 AMB substrate to improve thermal performance • SiC Power MOSFET chip

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Automotive-grade ACEPACK DRIVE power module, sixpack topology, 1200 V, 3.8 mOhm typ. SiC MOSFET gen.3 based

The ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electric vehicles traction inverter. This power module features switches based on silicon carbide Power MOSFET 3rd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in s • AQG 324 qualified \n• 1200 V blocking voltage \n• 3.8 mΩ of typical RDS(on) \n• Maximum operating junction temperature TJ = 175 °C \n• Very low switching energy \n• Low inductive compact design for an higher power density• Si3N4 AMB substrate to improve thermal performance \n• SiC Power MOSFET chi;

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