Nonvolatile Memory, Dual 1024 Position Programmable Resistors

GENERAL DESCRIPTION The ADN2850 is a dual-channel, nonvolatile memory1, digitally controlled resistors2 with 1024-step resolution, offering guaranteed maximum low resistor tolerance error of ±8. The device performs the same electronic adjustment function as a mechanical rheostat with enhanced res

文件：481.63 Kbytes 页数：20 Pages

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Nonvolatile Memory, Dual 1024-Position Digital Resistor

GENERAL DESCRIPTION The ADN2850 is a dual-channel, nonvolatile memory1, digitally controlled resistors2 with 1024-step resolution, offering guaranteed maximum low resistor tolerance error of ±8. The device performs the same electronic adjustment function as a mechanical rheostat with enhanced res

文件：604.75 Kbytes 页数：28 Pages

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Nonvolatile Memory, Dual 1024-Position Digital Resistor

文件：749.52 Kbytes 页数：30 Pages

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非易失性存储器、双通道1024位数字电阻

ADN2850是一款双通道非易失性存储器和1024步分辨率的数字控制电阻器，保证最大电阻容差误差仅为±8%。该器件可实现与机械可变电阻器相同的电子调整功能，而且具有增强的分辨率、固态可靠性和出色的低温度系数性能。ADN2850通过SPI®兼容型串行接口进行多功能编程，提供16种工作和调整模式，包括：暂存编程、存储器存储和恢复、递增/递减、±6 dB/步对数抽头调整、游标设置回读、以及用于存储其它器件的存储器数据、查找表或系统识别信息等用户自定义信息的额外EEMEM。\n\n 在暂存编程模式下，可以直接将具体设置编程至RDAC寄存器，使其设置W端与B端之间的电阻。该设置信息可以 • 双通道、1024位分辨率\n\n• 标称电阻：25 kΩ、250 kΩ\n\n• 标称电阻容差误差：±8%（最大值）\n\n• 低温度系数：35 ppm/°C\n\n• 2.7 V至5 V单电源或±2.5 V双电源\n\n• 电流监控可配置功能\n\n• SPI兼容型串行接口\n\n• 非易失性存储器存储游标设置\n\n• 加电刷新EEMEM设置\n\n• 永久性存储器写保护\n\n• 电阻容差储存于EEMEM中\n\n• 26字节额外非易失性存储器，用于存储用户定义信息\n\n• 1M编程周期\n\n• 典型数据保留期：100年;

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Nonvolatile Memory, Dual 1024 Position Programmable Resistors

GENERAL DESCRIPTION The ADN2850 is a dual-channel, nonvolatile memory1, digitally controlled resistors2 with 1024-step resolution, offering guaranteed maximum low resistor tolerance error of ±8. The device performs the same electronic adjustment function as a mechanical rheostat with enhanced res

文件：481.63 Kbytes 页数：20 Pages

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亚德诺

Nonvolatile Memory, Dual 1024 Position Programmable Resistors

GENERAL DESCRIPTION The ADN2850 is a dual-channel, nonvolatile memory1, digitally controlled resistors2 with 1024-step resolution, offering guaranteed maximum low resistor tolerance error of ±8. The device performs the same electronic adjustment function as a mechanical rheostat with enhanced res

文件：481.63 Kbytes 页数：20 Pages

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亚德诺

Nonvolatile Memory, Dual 1024 Position Programmable Resistors

GENERAL DESCRIPTION The ADN2850 is a dual-channel, nonvolatile memory1, digitally controlled resistors2 with 1024-step resolution, offering guaranteed maximum low resistor tolerance error of ±8. The device performs the same electronic adjustment function as a mechanical rheostat with enhanced res

文件：481.63 Kbytes 页数：20 Pages

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亚德诺

Nonvolatile Memory, Dual 1024 Position Programmable Resistors

GENERAL DESCRIPTION The ADN2850 is a dual-channel, nonvolatile memory1, digitally controlled resistors2 with 1024-step resolution, offering guaranteed maximum low resistor tolerance error of ±8. The device performs the same electronic adjustment function as a mechanical rheostat with enhanced res

文件：481.63 Kbytes 页数：20 Pages

AD

亚德诺

Nonvolatile Memory, Dual 1024 Position Programmable Resistors

GENERAL DESCRIPTION The ADN2850 is a dual-channel, nonvolatile memory1, digitally controlled resistors2 with 1024-step resolution, offering guaranteed maximum low resistor tolerance error of ±8. The device performs the same electronic adjustment function as a mechanical rheostat with enhanced res

文件：481.63 Kbytes 页数：20 Pages

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亚德诺

Nonvolatile Memory, Dual 1024 Position Programmable Resistors

GENERAL DESCRIPTION The ADN2850 is a dual-channel, nonvolatile memory1, digitally controlled resistors2 with 1024-step resolution, offering guaranteed maximum low resistor tolerance error of ±8. The device performs the same electronic adjustment function as a mechanical rheostat with enhanced res

文件：481.63 Kbytes 页数：20 Pages

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