HP2816

Thin-FilmRF/MicrowaveFilters

FEATURES •Smallsize:7x4x1.2mm(LxWxT) •Frequency:1000MHz •Steepattenuation •Characteristicimpedance:50 •Operating/Storagetemp:-40°C÷+85°C •Lowprofile •Ruggedconstruction •Tapedandreeled •RoHScompliant APPLICATIONS •Mobilecommunications •SatelliteTVrecei

IK2816

16constant-currentoutputchannels

ME2816

ME2816%U00A0Series

NJM2816

1.5ALOWDROPOUTREGULATORWITHVOLTAGECORRECTIONCIRCUIT

■FEATURES ●OutputCurrent1.5A ●DefaultOutputVoltageAccuracy5.1V±0.9 ●AdjustableOutputVoltage5.15V±1.2 ●OutputVoltageCorrection VO+375mV(typ),0mAto1500mAatRADJ=10kΩ ●InternalFixedSoft-Start4msec(typ) ●ErrorFlagOutput(FAULT) ●ErrorFlagOutputDel

NMC2816

16K(2KX8)ELECTRICALLYERASABLEPROM

SCH2816

SCH2816

MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithanN-channelsiliconMOSFET(SCH1416)andaSchottkybarrierdiode(SS05015)containedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •Ultrahigh-speedswit

SCH2816

MOSFET:N-ChannelSiliconMOSFETSBD:SchottkyBarrierDiodeGeneral-PurposeSwitchingDevice

SSF2816E

HighPowerandcurrenthandingcapability

DESCRIPTION TheSSF2816EusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V. GENERALFEATURES ●VDS=20V,ID=7A RDS(ON)

SSF2816E

20VDualN-ChannelMOSFET

Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva