2 GHz to 18 GHz, Digitally Tunable, High-Pass and Low-Pass Filter

文件：1.2272 Mbytes 页数：36 Pages

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亚德诺

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switc

文件：150.54 Kbytes 页数：4 Pages

AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switc

文件：150.54 Kbytes 页数：4 Pages

AOSMD

万国半导体

POWER ZENERS

DESCRIPTION One watt zener diodes, hermetically sealed in glass. FEATURES • High Surge Ratings • A Quarter the Size of Conventional 1Watt Zeners • Impervious to Moisture

文件：91.22 Kbytes 页数：2 Pages

MICROSEMI

美高森美