3 V, Voltage Monitoring Microprocessor Supervisory Circuits

GENERAL DESCRIPTION The ADM706P/ADM706R/ADM706S/ADM706T and the ADM708R/ADM708S/ADM708T microprocessor supervisory circuits are suitable for monitoring either 3 V or 3.3 V power supplies. FEATURES Precision supply voltage monitor 2.63 V (ADM706P, ADM706R, ADM708R) 2.93 V (ADM70

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AD

亚德诺

3 V, Voltage Monitoring Microprocessor Supervisory Circuits

GENERAL DESCRIPTION The ADM705/ADM706/ADM707/ADM708 microprocessor supervisory circuits are suitable for monitoring 5 V power supplies/batteries and can also monitor microprocessor activity. FEATURES Guaranteed RESET valid with VCC = 1 V 190 μA quiescent current Precision sup

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亚德诺

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 监控器 描述：IC SUPERVISOR 1 CHANNEL 8SOIC

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亚德诺

High Voltage Input Amplifier Circuit for Hi-Fi Power Amplifier

■ Overview The AN7062N is a high voltage integrated circuit designed for pre-driver of 60W-class Hi-Fi audio amp. Stereo operation is enabled due to two amplifiers built-in. ■ Features • High voltage • Low noise : Vni = 2.5µV (typ.) • Low distortion : THD = 0.003 (typ.) • Good channel separa

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PANASONIC

松下

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

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MOTOROLA

摩托罗拉

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

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POLYFET