FQD20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16.8A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.063Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD20N06

60VN-ChannelMOSFET

VDS60V ID(atVGS=10V)30A RDS(ON)(atVGS=10V)

FQD20N06

60VN-ChannelMOSFET

GeneralDescription ThisadvancedMOSFETtechnologyhasbeenespecially tailoredtoreduceon-stateresistance,andtoprovide superiorswitchingperformanceandhighavalancheenergy strength.Thesedevicesaresuitableforswitchedmode powersupplies,audioamplifier,DCmotorcontrol,and

FQD20N06L

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQD20N06LE

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQD20N06LE

N-Channel60-V(D-S)MOSFET

FQD20N06LETM

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON)

FQD20N06LTF

N-ChannelQFETMOSFET60V,17.2A,42m

FQD20N06LTM

N-ChannelQFET짰MOSFET60V,17.2A,42m廓

FQD20N06TF

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON)