| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz GENERAL DESCRIPTION The ADL8142S-CSL is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142S-CSL provides a typical gain of 27 dB, a 1. 文件:214.76 Kbytes 页数:8 Pages | AD 亚德诺 | AD | ||
GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz GENERAL DESCRIPTION The ADL8142 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142 provides a typical gain of 27 dB, a 1.6 dB typic 文件:1.47167 Mbytes 页数:20 Pages | AD 亚德诺 | AD | ||
GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz FEATURES ► Low noise figure: 1.6 dB typical at 27 GHz to 31 GHz ► Single positive supply (self biased) ► High gain: 27 dB typical at 27 GHz to 31 GHz ► High OIP3: 21.5 dBm typical at 27 GHz to 31 GHz ► RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP APPLICATIONS ► Satellite communication ► Telec 文件:1.414 Mbytes 页数:20 Pages | AD 亚德诺 | AD | ||
GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz GENERAL DESCRIPTION The ADL8142S-CSL is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142S-CSL provides a typical gain of 27 dB, a 1. 文件:214.76 Kbytes 页数:8 Pages | AD 亚德诺 | AD | ||
GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz GENERAL DESCRIPTION The ADL8142 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142 provides a typical gain of 27 dB, a 1.6 dB typic 文件:1.47167 Mbytes 页数:20 Pages | AD 亚德诺 | AD | ||
Evaluating the ADL8142 GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz GENERAL DESCRIPTION The ADL8142-EVALZ consists of a 4-layer printed circuit board (PCB) fabricated from 8 mil thick, Rogers 4003C and Isola 370HR, copper clad, forming a nominal thickness of 62 mils. The RFIN and RFOUT ports on the ADL8142-EVALZ are populated with 2.92 mm, female coaxial conn 文件:366.42 Kbytes 页数:5 Pages | AD 亚德诺 | AD | ||
GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz FEATURES ► Low noise figure: 1.6 dB typical at 27 GHz to 31 GHz ► Single positive supply (self biased) ► High gain: 27 dB typical at 27 GHz to 31 GHz ► High OIP3: 21.5 dBm typical at 27 GHz to 31 GHz ► RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP APPLICATIONS ► Satellite communication ► Telec 文件:1.414 Mbytes 页数:20 Pages | AD 亚德诺 | AD | ||
GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz GENERAL DESCRIPTION The ADL8142S-CSL is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142S-CSL provides a typical gain of 27 dB, a 1. 文件:214.76 Kbytes 页数:8 Pages | AD 亚德诺 | AD | ||
GaAs、pHEMT、MMIC、低噪声放大器,23 GHz至31 GHz 有关ADL8142-2C-CSL的更多信息,请参阅相应的数据手册。\n\n ADL8142-2CHIP\n\n ADL8142-2CHIP是一款砷化镓(GaAs)、单芯片微波集成电路(MMIC)、假晶高电子迁移率晶体管(pHEMT)低噪声宽带放大器,工作频率范围为23 GHz至31 GHz。在27 GHz至31 GHz范围内,ADL8142-2CHIP提供26.5 dB典型增益、1.8 dB典型噪声系数和20 dBm典型输出三阶交调截点(OIP3),采用2 V电源电压时功耗仅为25 mA。注意,可通过较大的漏极电流改善OIP3。ADL8142-2CHIP还具有交流耦合的输入 ADL8142-2CHIP\n• 单正电源(自偏置)\n• 高增益:26.5 dB(典型值,27 GHz至31 GHz时)\n• 高OIP3:20 dBm(典型值,27 GHz至31 GHz时)\n• 裸片尺寸:0.945 mm × 1.015 mm × 0.100 mm; | ADI 亚德诺 | ADI | ||
GaAs、pHEMT、MMIC、低噪声放大器,23 GHz 至 31 GHz ADL8142S-CSL 是一款砷化镓 (GaAs)、单片式微波集成电路 (MMIC)、假晶高电子迁移率晶体管 (pHEMT) 低噪声宽带放大器,工作频率范围为 23 GHz 至 31 GHz。在 27 GHz 至 31 GHz 范围内,ADL8142S-CSL 提供 27 dB 典型增益、1.6 dB 典型噪声指数和 21.5 dBm 典型输出三阶交调截点 (OIP3),采用 2 V 电源电压时功耗仅为 25 mA。请注意,可通过较大的漏极电流改善 OIP3。ADL8142S-CSL 还具有交流耦合的输入和输出,内部匹配至 50 Ω,因而非常适合高容量微波射频应用。\n\n ADL • 低噪声指数:1.6 dB(典型值,27 GHz 至 31 GHz 时)\n• 单正电源(自偏置)\n• 高增益:27 dB(典型值,27 GHz 至 31 GHz 时)\n• 高 OIP3:21.5 dBm(典型值,27 GHz 至 31 GHz 时)\n• 符合 RoHS 标准的 2 mm × 2 mm、8 引脚 LFCSP 封装; | ADI 亚德诺 | ADI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI |
25+ |
8-lead LFCSP 2 mm × 2 mm × 0 |
5500 |
GaAs、pHEMT、MMIC、低噪声放大器,23 GHz至31 GHz |
询价 | ||
ADI/亚德诺 |
25+ |
20000 |
原装现货,可追溯原厂渠道 |
询价 | |||
ADI/亚德诺 |
23+ |
REEL7 |
3000 |
只做原装正品,假一赔十 |
询价 | ||
Analog Devices Inc. |
25+ |
模具 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ADI/亚德诺 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
ADI(亚德诺) |
25+ |
- |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ADI(亚德诺) |
25+ |
模具 |
4606 |
样件支持,可原厂排单订货! |
询价 | ||
ADI(亚德诺) |
25+ |
模具 |
4658 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ADI |
2534+ |
原厂封装 |
25000 |
15年芯片行业经验/只供原装正品:13570885961邹小姐 |
询价 | ||
ADI |
551 |
询价 |
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