10MHz to 12GHz Low Noise Amplifier with 10MHz to 14GHz Bypass Switches

FEATURES ► Wideband amplifier with multiple bypass modes ► 4 pin-selectable operating modes ► Internal amplifier mode operating from 10MHz to 12GHz ► Internal bypass mode operating from 10MHz to 14GHz ► Two external bypass modes from 10MHz to 14GHz ► Integrated power-supply decoupling ► Ref

文件：3.118 Mbytes 页数：37 Pages

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HALL SWITH LOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH

DESCRIPTION The AH8113 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature stability are ac

文件：465.58 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

HALL SWITH LOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH

DESCRIPTION The AH8113 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature stability are ac

文件：465.58 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

HALL SWITH LOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH

DESCRIPTION The AH8113 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature stability are ac

文件：465.58 Kbytes 页数：9 Pages

AITSEMI

创瑞科技