GaAs, pHEMT, Low Noise Amplifier, 20 GHz to 54 GHz

GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz. The ADL8106 provides a gain of 21.5 dB, an output power for 1

文件：2.57045 Mbytes 页数：28 Pages

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亚德诺

GaAs, pHEMT, Low Noise Amplifier, 20 GHz to 54 GHz

GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz. The ADL8106 provides a gain of 21.5 dB, an output power for 1

文件：2.57045 Mbytes 页数：28 Pages

AD

亚德诺

GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz

GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for ope

文件：1.91738 Mbytes 页数：26 Pages

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亚德诺

GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz

FEATURES ► Integrated power supply capacitors and bias inductors ► Integrated ac-coupling capacitors ► Gain: 21.5 dB typical at 30 GHz to 44 GHz ► Input return loss: 12.5 dB typical at 30 GHz to 44 GHz ► Output return loss: 19 dB typical at 30 GHz to 44 GHz ► OP1dB: 14.5 dB typical at 30 GHz

文件：1.87421 Mbytes 页数：26 Pages

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亚德诺

Very fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATURES

文件：54.58 Kbytes 页数：10 Pages

PHI

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