GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz

GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for ope

文件：1.91738 Mbytes 页数：26 Pages

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GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz

FEATURES ► Integrated power supply capacitors and bias inductors ► Integrated ac-coupling capacitors ► Gain: 21.5 dB typical at 30 GHz to 44 GHz ► Input return loss: 12.5 dB typical at 30 GHz to 44 GHz ► Output return loss: 19 dB typical at 30 GHz to 44 GHz ► OP1dB: 14.5 dB typical at 30 GHz

文件：1.87421 Mbytes 页数：26 Pages

AD

亚德诺

GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz

FEATURES ► Integrated power supply capacitors and bias inductors ► Integrated ac-coupling capacitors ► Gain: 21.5 dB typical at 30 GHz to 44 GHz ► Input return loss: 12.5 dB typical at 30 GHz to 44 GHz ► Output return loss: 19 dB typical at 30 GHz to 44 GHz ► OP1dB: 14.5 dB typical at 30 GHz

文件：1.87421 Mbytes 页数：26 Pages

AD

亚德诺

GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz

GENERAL DESCRIPTION The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for ope

文件：1.91738 Mbytes 页数：26 Pages

AD

亚德诺