GaAs, pHEMT, MMIC, Low Noise Amplifier, 1 GHz to 22 GHz

FEATURES ► Single positive supply (self biased) ► Gain: 27 dB typical at 9 GHz to 19 GHz ► OP1dB: 13.5 dB typical at 1 GHz to 9 GHz ► OIP3: 25 dBm typical at 1 GHz to 9 GHz ► Noise figure: 2.5 dB typical at 9 GHz to 19 GHz ► RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP APPLICATIONS ► Telec

文件：1.89593 Mbytes 页数：23 Pages

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亚德诺

GaAs、pHEMT、MMIC、低噪声放大器，1 GHz至22 GHz

ADL8102是一款砷化镓(GaAs)、单芯片微波集成电路(MMIC)、假晶高电子迁移率晶体管(pHEMT)、低噪声宽带放大器，工作频率范围为1 GHz至22 GHz。\n\n 在9 GHz至19 GHz范围内，ADL8102提供27 dB典型增益、2.5 dB典型噪声系数，在1 GHz至9 GHz范围内提供25 dBm典型输出三阶交调截点(OIP3)，以及高达15.5 dBm的饱和输出功率(PSAT)，采用5 V电源电压时功耗仅为110 mA。ADL8102还具有内部匹配50 Ω的输入和输出。RFIN和RFOUT引脚均内部交流耦合，同时集成了偏置电感，使其非常适合基于表贴技术(SM • 单个正电源（自偏置）\n\n• 增益：27 dB（典型值，9 GHz至19 GHz时）\n\n• OP1dB: 13.5 dB（典型值，1 GHz至9 GHz时）;

ADI

亚德诺

GaAs, pHEMT, MMIC, Low Noise Amplifier, 1 GHz to 22 GHz

FEATURES ► Single positive supply (self biased) ► Gain: 27 dB typical at 9 GHz to 19 GHz ► OP1dB: 13.5 dB typical at 1 GHz to 9 GHz ► OIP3: 25 dBm typical at 1 GHz to 9 GHz ► Noise figure: 2.5 dB typical at 9 GHz to 19 GHz ► RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP APPLICATIONS ► Telec

文件：1.89593 Mbytes 页数：23 Pages

AD

亚德诺

GaAs, pHEMT, MMIC, Low Noise Amplifier, 1 GHz to 22 GHz

FEATURES ► Single positive supply (self biased) ► Gain: 27 dB typical at 9 GHz to 19 GHz ► OP1dB: 13.5 dB typical at 1 GHz to 9 GHz ► OIP3: 25 dBm typical at 1 GHz to 9 GHz ► Noise figure: 2.5 dB typical at 9 GHz to 19 GHz ► RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP APPLICATIONS ► Telec

文件：1.89593 Mbytes 页数：23 Pages

AD

亚德诺

GaAs, pHEMT, MMIC, Low Noise Amplifier, 1 GHz to 22 GHz

FEATURES ► Single positive supply (self biased) ► Gain: 27 dB typical at 9 GHz to 19 GHz ► OP1dB: 13.5 dB typical at 1 GHz to 9 GHz ► OIP3: 25 dBm typical at 1 GHz to 9 GHz ► Noise figure: 2.5 dB typical at 9 GHz to 19 GHz ► RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP APPLICATIONS ► Telec

文件：1.89593 Mbytes 页数：23 Pages

AD

亚德诺