0.56Ω On Resistance High Density Octal SPST Switch

FEATURES ► 0.56Ω typical on resistance ► High continuous current of up to 768mA ► Flat RON across signal range of 0.004Ω ► THD of −127dB at 1kHz ► Route through pins for digital signals and supplies ► Integrated passive components ► SPI with error detection ► Guaranteed break-before-make s

文件：1.31314 Mbytes 页数：32 Pages

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亚德诺

0.56Ω On Resistance High Density Octal SPST Switch

FEATURES ► 0.56Ω typical on resistance ► High continuous current of up to 768mA ► Flat RON across signal range of 0.004Ω ► THD of −127dB at 1kHz ► Route through pins for digital signals and supplies ► Integrated passive components ► SPI with error detection ► Guaranteed break-before-make s

文件：1.31314 Mbytes 页数：32 Pages

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亚德诺

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 speci

文件：135.62 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 speci

文件：135.62 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel 30-V (D-S) MOSFET

文件：1.16679 Mbytes 页数：7 Pages

VBSEMI

微碧半导体