1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

文件：152.56 Kbytes 页数：12 Pages

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1 pC的超低电荷注入, 100 pA的泄漏电流,CMOS、±5 V/5 V/3 V、四通道单刀单掷开关

ADG611、ADG612和ADG613均为单芯片CMOS器件，内置四个独立可选的开关。+25ºC时，这些开关提供1 pC的超低电荷注入和100 pA的泄漏电流。 上述器件的额定电源电压为±5 V、5 V和3 V，均内置四个独立的单刀单掷(SPST)开关。ADG611与ADG612的不同是数字控制逻辑相反。ADG611开关的接通条件是相关控制输入为逻辑低电平，而ADG612开关接通则要求逻辑高电平。ADG613有两个开关的数字控制逻辑与ADG611相似，但其它两个开关的控制逻辑则相反。\n\n 当接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。AD • 1 pC电荷注入\n\n• ±2.7 V至±5.5 V双电源供电\n\n• +2.7 V至+5.5 V单电源供电\n\n• 汽车应用温度范围：−40°C至+125°C\n\n• 泄漏电流：100 pA（最大值，25°C）;

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1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

文件：152.56 Kbytes 页数：12 Pages

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亚德诺

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage

文件：361.34 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage

文件：361.34 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

AD

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