1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

文件：152.56 Kbytes 页数：12 Pages

AD

亚德诺

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

AD

亚德诺

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

AD

亚德诺

1 pC Charge Injection, 100 pA Leakage

文件：361.34 Kbytes 页数：16 Pages

AD

亚德诺

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 页数：16 Pages

AD

亚德诺