1 pF Off Capacitance, 1 pC Charge Injection, 짹15 V/12 V iCMOS??Quad SPST Switches

GENERAL DESCRIPTION The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipol

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Low Capacitance, Low Charge Injection

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低电容、低电荷注入、±15 V/+12 V iCMOS、四通道单刀单掷开关

ADG1211/ADG1212/ADG1213均为单芯片互补金属氧化物半导体(CMOS)器件，内置四个采用iCMOS®（工业CMOS）工艺设计的独立可选开关。iCMOS是一种模块式制造工艺，集高电压CMOS与双极性技术于一体。利用这种工艺，可以开发工作电压达33 V的各种高性能模拟IC，并实现以往的高压器件所无法实现的尺寸。与采用传统CMOS工艺的模拟IC不同，iCMOS器件不但可以承受高电源电压，同时还能提升性能、大幅降低功耗并减小封装尺寸。\n\n 这些开关具有超低电容和电荷注入特性，因而是要求低毛刺和快速建立时间的数据采集与采样保持应用的理想解决方案。较快的开关速度及高信号带宽 • 1 pF关断电容\n• 2.6 pF导通电容\n• 电荷注入小于1 pC\n• 电源电压范围：33 V\n• 导通电阻：120 Ω\n• 额定电源电压：±15 V、+12 V\n• 无需 VL 电源\n• 3 V逻辑兼容输入\n• 轨到轨工作\n• 16引脚TSSOP和16引脚LFCSP\n• 典型功耗：<0.03 µW;

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1 pF Off Capacitance, 1 pC Charge Injection, 짹15 V/12 V iCMOS??Quad SPST Switches

GENERAL DESCRIPTION The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipol

文件：271.49 Kbytes 页数：16 Pages

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1 pF Off Capacitance, 1 pC Charge Injection, 짹15 V/12 V iCMOS??Quad SPST Switches

GENERAL DESCRIPTION The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipol

文件：271.49 Kbytes 页数：16 Pages

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Low Capacitance, Low Charge Injection

文件：330.09 Kbytes 页数：16 Pages

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Low Capacitance, Low Charge Injection

文件：276.53 Kbytes 页数：12 Pages

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Low Capacitance, Low Charge Injection

文件：276.53 Kbytes 页数：12 Pages

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Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS Quad SPST Switches

文件：330.09 Kbytes 页数：16 Pages

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Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS Quad SPST Switches

文件：330.09 Kbytes 页数：16 Pages

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