ADG1201

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERALDESCRIPTION TheADG1201/ADG1202aremonolithiccomplementarymetal-oxidesemiconductor(CMOS)devicescontaininganSPSTswitchdesignedinaniCMOS®(industrialCMOS)process.iCMOSisamodularmanufacturingprocesscombininghighvoltageCMOSandbipolartechnologies.Itenablesthede

ADG1201BRJZ-R2

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERALDESCRIPTION TheADG1201/ADG1202aremonolithiccomplementarymetal-oxidesemiconductor(CMOS)devicescontaininganSPSTswitchdesignedinaniCMOS®(industrialCMOS)process.iCMOSisamodularmanufacturingprocesscombininghighvoltageCMOSandbipolartechnologies.Itenablesthede

ADG1201BRJZ-REEL7

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERALDESCRIPTION TheADG1201/ADG1202aremonolithiccomplementarymetal-oxidesemiconductor(CMOS)devicescontaininganSPSTswitchdesignedinaniCMOS®(industrialCMOS)process.iCMOSisamodularmanufacturingprocesscombininghighvoltageCMOSandbipolartechnologies.Itenablesthede

ADG1202

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERALDESCRIPTION TheADG1201/ADG1202aremonolithiccomplementarymetal-oxidesemiconductor(CMOS)devicescontaininganSPSTswitchdesignedinaniCMOS®(industrialCMOS)process.iCMOSisamodularmanufacturingprocesscombininghighvoltageCMOSandbipolartechnologies.Itenablesthede

ADG1202BRJZ-R2

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERALDESCRIPTION TheADG1201/ADG1202aremonolithiccomplementarymetal-oxidesemiconductor(CMOS)devicescontaininganSPSTswitchdesignedinaniCMOS®(industrialCMOS)process.iCMOSisamodularmanufacturingprocesscombininghighvoltageCMOSandbipolartechnologies.Itenablesthede

ADG1202BRJZ-REEL7

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERALDESCRIPTION TheADG1201/ADG1202aremonolithiccomplementarymetal-oxidesemiconductor(CMOS)devicescontaininganSPSTswitchdesignedinaniCMOS®(industrialCMOS)process.iCMOSisamodularmanufacturingprocesscombininghighvoltageCMOSandbipolartechnologies.Itenablesthede

ADG1204

2 pF Off Capacitance, 1 pC Charge Injection, -15 V/12 V 4:1 iCMOS Multiplexer

GENERALDESCRIPTION TheADG1204isacomplementarymetal-oxidesemiconductor(CMOS)analogmultiplexer,comprisingfoursinglechannelsdesignedonaniCMOS(industrialCMOS)process.iCMOS®isamodularmanufacturingprocessthatcombineshighvoltageCMOSandbipolartechnologies.Itenablesth

ADG1204YCP

2 pF Off Capacitance, 1 pC Charge Injection, -15 V/12 V 4:1 iCMOS Multiplexer

GENERALDESCRIPTION TheADG1204isacomplementarymetal-oxidesemiconductor(CMOS)analogmultiplexer,comprisingfoursinglechannelsdesignedonaniCMOS(industrialCMOS)process.iCMOS®isamodularmanufacturingprocessthatcombineshighvoltageCMOSandbipolartechnologies.Itenablesth

ADG1204YRU

2 pF Off Capacitance, 1 pC Charge Injection, -15 V/12 V 4:1 iCMOS Multiplexer

GENERALDESCRIPTION TheADG1204isacomplementarymetal-oxidesemiconductor(CMOS)analogmultiplexer,comprisingfoursinglechannelsdesignedonaniCMOS(industrialCMOS)process.iCMOS®isamodularmanufacturingprocessthatcombineshighvoltageCMOSandbipolartechnologies.Itenablesth

ADG1206

Low Capacitance, 16- and 8-Channel -15 V/12 V iCMOS Multiplexers

GENERALDESCRIPTION TheADG1206andADG1207aremonolithiciCMOS®analogmultiplexerscomprisingsixteensinglechannelsandeightdifferentialchannels,respectively.TheADG1206switchesoneofsixteeninputstoacommonoutput,asdeterminedbythe4-bitbinaryaddresslinesA0,A1,A2,andA3