丝印：ADG；Package：TSOP-5；Operational Amplifier, Rail-to-Rail Output, 3 MHz BW

The TLV/NCV27x operational amplifiers provide rail−to−rail output operation. The output can swing within 320 mV to the positive rail and 50 mV to the negative rail. This rail−to−rail operation enables the user to make optimal use of the entire supply voltage range while taking advantage of 3 M

文件：1.51325 Mbytes 页数：26 Pages

ONSEMI

安森美半导体

丝印：ADG；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：975.32 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

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亚德诺

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

AD

亚德诺

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

AD

亚德诺

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

AD

亚德诺

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

AD

亚德诺

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS SPST in SOT-23

GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the de

文件：293.22 Kbytes 页数：16 Pages

AD

亚德诺

2 pF Off Capacitance, 1 pC Charge Injection, -15 V/12 V 4:1 iCMOS Multiplexer

GENERAL DESCRIPTION The ADG1204 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer, comprising four single channels designed on an iCMOS (industrial CMOS) process. iCMOS® is a modular manufacturing process that combines high voltage CMOS and bipolar technologies. It enables th

文件：453.75 Kbytes 页数：16 Pages

AD

亚德诺

2 pF Off Capacitance, 1 pC Charge Injection, -15 V/12 V 4:1 iCMOS Multiplexer

GENERAL DESCRIPTION The ADG1204 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer, comprising four single channels designed on an iCMOS (industrial CMOS) process. iCMOS® is a modular manufacturing process that combines high voltage CMOS and bipolar technologies. It enables th

文件：453.75 Kbytes 页数：16 Pages

AD

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