FTC4377C

TRANSISTOR(NPN)

FTC4377D

TRANSISTOR(NPN)

HETC4377

GENERALPURPOSETRANSISTOR

INN4377F

DigitallyControllableOff-LineCV/CCZVSFlybackSwitcherICwith750VPowiGaN,ActiveClampDriveandSynchronousRectification

HighlyIntegrated,CompactFootprint •Quasi-Resonant(QR)orzerovoltageswitching(ZVS)flyback controllerwhenpairedwithClampZeroTM(activeclampIC) •UniquecontrolalgorithmtoenableZVSinbothDCMandCCM •Robust750VPowiGaNTMprimaryswitch •Steady-stateswitchingfrequency

KTC4377

NPNSiliconEpitaxialPlanarTransistor

FEATURES HighDCCurrentGainandExcellenthFELinearity :hFE(1)=140600(VCE=1V,IC=0.5A) :hFE(2)=70(Min.),140(Typ.)(VCE=1V,IC=2A). Lowsaturationvoltage:VCE(sat)=0.5V(Max).(IC=2A,IB=50mA). Smallflatpackage. APPLICATIONS Poweramplifierapplication. Powerswitchingapplication.

KTC4377

Plastic-EncapsulateTransistors

FEATURES •Lowvoltage

KTC4377

EpitaxialPlanarNPNTransistor

■Features ●CollectorPowerDissipation:PC=500mW ●CollectorCurrent:IC=2A

KTC4377

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Lowvoltage

KTC4377

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighDCCurrentGainandExcellenthFELinearity :hFE(1)=140600(VCE=1V,IC=0.5A) :hFE(2)=70(Min.),140(Typ.)(VCE=1V,IC=2A). ●Lowsaturationvoltage:VCE(sat)=0.5V(Max).(IC=2A,IB=50mA). ●Smallflatpackage. APPLICATIONS ●Poweramplifierapplication. ●Powerswitc

KTC4377

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:30V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃