1200-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable V F and Q RR at elevated temperatures

文件：319.09 Kbytes 页数：5 Pages

AnalogPower

1200-V Direct WGB Diode

Key Features: • SiC performance • Easy paralleling • High current carrying capability • Very low junction capacitance • Highly stable VF and QRR at elevated temperatures

文件：310.34 Kbytes 页数：3 Pages

AnalogPower

1200-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable V F and Q RR at elevated temperatures

文件：234.5 Kbytes 页数：5 Pages

AnalogPower

4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.17647 Mbytes 页数：9 Pages

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