ADC128S102-SEP数据手册TI中文资料规格书

特性 Features

• Radiation tolerant:
• Single-event latch-up (SEL) immune up to LET = 43 MeV-cm2/mg at 125°C
• Single-event functional interrupt (SEFI) characterized up to LET = 43 MeV-cm2/mg
• Total ionizing dose (TID) characterized up to 30 krad(Si)
• TID RLAT/RHA up to 30 krad(Si)

• Space-enhanced plastic (space EP):
• Meets ASTM E595 outgassing specification
• Vendor item drawing (VID) V62/TBD
• Military temperature range: –55°C to 125°C
• One fabrication, assembly, and test site
• Gold bond wire, NiPdAu lead finish
• Wafer lot traceability
• Extended product life cycle
• Extended product change notification

• Wide supply range:
• VA: 2.7 V to 5.25 V
• VD: 2.7 V to VA

• SPI™-, QSPI™-, MICROWIRE-, DSP-compatible
• Conversion rate: 50 kSPS to 1 MSPS
• DNL: +1.5 LSB to −0.9 LSB (maximum)
• INL: +1.4 to −1.25 LSB (maximum)
• Power consumption:
• 3-V supply: 2.3 mW (typical)
• 5-V supply: 10.7 mW (typical)