AOT430

N-Channel80V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •PrimarySideSwitching •SynchronousRectification •DC/ACInverters •LEDBacklighting

AOT430

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=80A@TC=25℃ •DrainSourceVoltage- :VDSS=75V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=11.5mΩ(Max) •100avalanchetested •MinimumLot-to-Lo

AWS430

AutomaticWeatherStationAWS430

Features •Specificallydesignedforcritical maritimeweatherapplications •High-qualityanti-corrosivedesign •ComplieswithLloyd’sRegister andIEC60945requirementsfor applicableparts •Highdataavailability •Built-intestproceduresanddata validation •Accuratetruewindc

B430

SiliconBridgeRectifier

BCM430X

SENTRY5PRODUCTLINE:SECUREDSWITCHPROCESSORS

BCM430X

SENTRY5PRODUCTLINE:BCM5364/BCM5364PSECUREDSWITCHPROCESSORS

OVERVIEW BroadcomsBCM5364andBCM5364P,twoSystem-On-Chips,arethemosthighlyintegratedaccessswitchprocessorthereare.TheBCM5364/BCM5364Palsofeaturesanon-chip,five-port10/100Ethernetswitchwithmanagementfeatures.Thisswitchprocessoralsooffersextensiveprocessorandinter

BCR430U

LowDropVoltageLEDDriverIC

BD430

PNPSILICONPLANARTRANSISTOR

PnpSiliconPlanarTransistor

BGA430

A35dBGain-SlopedLNBI.F.AmplifierforDirectBroadcastSatelliteTelevisionApplicationsusingtheBGA430&BGB540SiliconMMICs

Description TheBGA430isabroadbandhighgainamplifierbaseduponInfineonTechnologies’SiliconBipolarTechnologyB6HF.HousedinasmallSOT363packagethisSiliconMonolithicMicrowaveIntegratedCircuit(MMIC)requiresveryfewexternalcomponentsduetotheintegratedbiasingconcept.

BTM430

modulesfromLairdTechnologieshavebeendesignedtomeettheneedsofdeveloperswhowishtoaddrobust