Dual, Current Feedback Low Power Op Amp

PRODUCT DESCRIPTION The AD812 is a low power, single supply, dual video amplifier. Each of the amplifiers have 50 mA of output current and are optimized for driving one back-terminated video load (150 Ω) each. Each amplifier is a current feedback amplifier and features gain flatness of 0.1 dB t

文件：372.64 Kbytes 页数：16 Pages

AD

亚德诺

Dual, Current Feedback Low Power Op Amp

PRODUCT DESCRIPTION The AD812 is a low power, single supply, dual video amplifier. Each of the amplifiers have 50 mA of output current and are optimized for driving one back-terminated video load (150 Ω) each. Each amplifier is a current feedback amplifier and features gain flatness of 0.1 dB t

文件：358.16 Kbytes 页数：16 Pages

AD

亚德诺

Dual, Current Feedback Low Power Op Amp

PRODUCT DESCRIPTION The AD812 is a low power, single supply, dual video amplifier. Each of the amplifiers have 50 mA of output current and are optimized for driving one back-terminated video load (150 Ω) each. Each amplifier is a current feedback amplifier and features gain flatness of 0.1 dB t

文件：358.16 Kbytes 页数：16 Pages

AD

亚德诺

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

文件：21.01 Kbytes 页数：2 Pages

NTE

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件：50.06 Kbytes 页数：6 Pages

NEC

瑞萨

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件：50.06 Kbytes 页数：6 Pages

NEC

瑞萨