首页 >AD8075ARUZ其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
500MHz,G=-1and2TripleVideoBufferswithDisable PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
500MHz,G=1and2TripleVideoBufferswithDisable FEATURES DualSupply5V High-SpeedFullyBufferedInputsandOutputs 600MHzBandwidth(–3dB)200mVp-p 500MHzBandwidth(–3dB)2Vp-p 1600V/sSlewRate,G=+1 1350V/sSlewRate,G=+2 FastSettlingTime:4ns LowSupplyCurrent: | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
500MHz,G=1and2TripleVideoBufferswithDisable PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
6-LineEMIFilterwithIntegratedESDProtection | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW |
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