AD8075Z-EVAL

500 MHz, G = 1 and 2 Triple Video Buffers with Disable

PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse

AD8075Z-EVAL

500 MHz, G = 1 and 2 Triple Video Buffers with Disable

FEATURES DualSupply
5V High-SpeedFullyBufferedInputsandOutputs 600MHzBandwidth(–3dB)200mVp-p 500MHzBandwidth(–3dB)2Vp-p 1600V/sSlewRate,G=+1 1350V/sSlewRate,G=+2 FastSettlingTime:4ns LowSupplyCurrent:

AOZ8075

6-LineEMIFilterwithIntegratedESDProtection

APT8075

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT8075

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

APT8075AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

APT8075BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

APT8075BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT8075BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

APT8075BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.