AD6635BBSLASHPCB

4-Channel, 80 MSPS WCDMA Receive Signal Processor (RSP)

GENERALDESCRIPTION TheAD6635isamultimode,8-channel,digitalReceiveSignalProcessor(RSP)capableofprocessinguptofourWCDMAchannels.Eachchannelconsistsoffourcascadedsignal-processingelements:afrequencytranslator,twoCICdecimatingfilters,andaprogrammablecoefficient-d

AEC-6635

FanlessEmbeddedControllerWithIntelCorei7/i5Processor

AWT6635

HELP3DCTM(Band5)LTE/WCDMA/CDMALinearPAModule

CPH6635

ComplementaryDualCPH6PowerMOSFET

CPH6635-TL-H

ComplementaryDualCPH6PowerMOSFET

EM6635

LowPowerMicrocontrollerwithRCand32kHzoscillatorsand9highdriveoutputs

FDD6635

N-channelEnhancementModePowerMOSFET

Features VDS=30V,ID=80A RDS(ON)

FDD6635

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=59A@TC=25℃ ·DrainSourceVoltage :VDSS=35V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FDD6635

35VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeenproducedusingFairchildSemiconductor’sproprietaryPowerTrenchtechnologytodeliverlowRdsonandoptimizedBvdsscapabilitytooffersuperiorperformancebenefitintheapplications. Features •59A,35VRDS(ON)=10mΩ@VGS=10VRDS(ON

IRF6635

DirectFETPowerMOSFET

Description TheIRF6635combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeo