Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

文件：335.54 Kbytes 页数：12 Pages

AD

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Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

文件：335.54 Kbytes 页数：12 Pages

AD

亚德诺

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

文件：335.54 Kbytes 页数：12 Pages

AD

亚德诺

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

文件：335.54 Kbytes 页数：12 Pages

AD

亚德诺

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

文件：335.54 Kbytes 页数：12 Pages

AD

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航空航天用双通道精密低功耗BiFET运算放大器

AD648是一对匹配的低功耗、精密、单芯片运算放大器， 偏置电流（最大10 pA，预热状态）和静态电流（最大400 µA）均非常低，采用离子植入FET和激光调整技术制造。在AD648的整个共模电压范围内，保证输入偏置电流符合额定性能。\n\n AD648推荐用于要求低功耗和出色直流与交流性能的双电源运算放大器应用。在电池供电的精密仪器前端和CMOS DAC缓冲器等应用中，AD648的低输入失调电压和漂移、低偏置电流以及低1/f噪声这些特性的优质组合可降低输出误差。 在高阻抗缓冲应用中，其高共模抑制和高开环增益可保证12位以上的线性度。 • 直流性能：静态电流： 400 µA（最大值）偏置电流： 10pA（最大值）噪声： 2µV p-p（典型值，0.1至10Hz）\n\n\n\n• 交流性能：压摆率： 1.8V/µs（典型值）单位增益带宽：1MHz（典型值）;

ADI

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