AD647S数据手册ADI中文资料规格书

描述 Description

PRODUCT DESCRIPTION
The AD647 is an ultralow drift, dual JFET amplifier that combines high performance and convenience in a single package. The AD647 uses the most advanced ion-implantation and laser wafer drift trimming technologies to achieve the highest performance currently available in a dual JFET. Ion-implantation permits the fabrication of matched JFETs on a monolithic bipolar chip. Laser wafer drift trimming trims both the initial offset voltage and its drift with temperature to provide offsets as low as 100 µV (250 µV max) and drifts of 2.5 µV/°C max.FEATURES
Low Offset Voltage Drift
Matched Offset Voltage
Matched Offset Voltage Over Temperature
Matched Bias Currents
Crosstalk: –124 dB at 1 kHz
Low Bias Current: 35 pA max Warmed Up
Low Offset Voltage: 250 mV max
Low Input Voltage Noise: 2 mV p-p
High Open Loop Gain: 108 dB
Low Quiescent Current: 2.8 mA max
Low Total Harmonic Distortion
Standard Dual Amplifier Pinout
Available in Hermetic Metal Can Package, Hermetic Surface Mount (20-Pin LCC) and Chip Form
MIL-STD-883B Processing Also Available
Single Version Available: AD547

特性 Features

Low Offset Voltage Drift
Matched Offset Voltage
Matched Offset Voltage Over Temperature
Matched Bias Currents
Crosstalk: –124 dB at 1 kHz
Low Bias Current: 35 pA max Warmed Up
Low Offset Voltage: 250 mV max
Low Input Voltage Noise: 2 mV p-p
High Open Loop Gain: 108 dB
Low Quiescent Current: 2.8 mA max
Low Total Harmonic Distortion
Standard Dual Amplifier Pinout
Available in Hermetic Metal Can Package, Hermetic Surface Mount (20-Pin LCC) and Chip Form
MIL-STD-883B Processing Also Available
Single Version Available: AD547