Ultralow Drift, Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD647 is an ultralow drift, dual JFET amplifier that combines high performance and convenience in a single package. The AD647 uses the most advanced ion-implantation and laser wafer drift trimming technologies to achieve the highest performance currently available in a d

文件：378.71 Kbytes 页数：6 Pages

AD

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Ultralow Drift, Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD647 is an ultralow drift, dual JFET amplifier that combines high performance and convenience in a single package. The AD647 uses the most advanced ion-implantation and laser wafer drift trimming technologies to achieve the highest performance currently available in a d

文件：378.71 Kbytes 页数：6 Pages

AD

亚德诺

Ultralow Drift, Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD647 is an ultralow drift, dual JFET amplifier that combines high performance and convenience in a single package. The AD647 uses the most advanced ion-implantation and laser wafer drift trimming technologies to achieve the highest performance currently available in a d

文件：378.71 Kbytes 页数：6 Pages

AD

亚德诺

Ultralow Drift, Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD647 is an ultralow drift, dual JFET amplifier that combines high performance and convenience in a single package. The AD647 uses the most advanced ion-implantation and laser wafer drift trimming technologies to achieve the highest performance currently available in a d

文件：378.71 Kbytes 页数：6 Pages

AD

亚德诺

Ultralow Drift, Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD647 is an ultralow drift, dual JFET amplifier that combines high performance and convenience in a single package. The AD647 uses the most advanced ion-implantation and laser wafer drift trimming technologies to achieve the highest performance currently available in a d

文件：378.71 Kbytes 页数：6 Pages

AD

亚德诺

Ultralow Drift, Dual BiFET Op Amp

PRODUCT DESCRIPTION\nThe AD647 is an ultralow drift, dual JFET amplifier that combines high performance and convenience in a single package. The AD647 uses the most advanced ion-implantation and laser wafer drift trimming technologies to achieve the highest performance currently available in a dual Low Offset Voltage Drift\nMatched Offset Voltage\nMatched Offset Voltage Over Temperature\nMatched Bias Currents\nCrosstalk: –124 dB at 1 kHz\nLow Bias Current: 35 pA max Warmed Up\nLow Offset Voltage: 250 mV max\nLow Input Voltage Noise: 2 mV p-p\nHigh Open Loop Gain: 108 dB\nLow Quiescent Current:;

ADI

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