Low Level, True RMS-to-DC Converter

FEATURES True rms-to-dc conversion 200 mV full scale Laser-trimmed to high accuracy 0.5% maximum error (AD636K) 1.0% maximum error (AD636J) Wide response capability Computes rms of ac and dc signals 1 MHz, −3 dB bandwidth: V rms > 100 mV Signal crest factor of 6 for 0.5% error

文件：473.54 Kbytes 页数：16 Pages

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Low Level, True RMS-to-DC Converter

文件：444.66 Kbytes 页数：16 Pages

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Package：TO-100-10 金属罐；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） RMS 至 DC 转换器 描述：IC RMS TO DC CONVERTER TO100-10

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1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

文件：147.68 Kbytes 页数：12 Pages

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1 pC Charge Injection, 100 pA Leakage

文件：498.96 Kbytes 页数：16 Pages

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1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

文件：147.68 Kbytes 页数：12 Pages

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