High Precision 10 V Reference

GENERAL DESCRIPTION The AD587 represents a major advance in state-of-the-art monolithic voltage references. Using a proprietary ionimplanted buried Zener diode and laser wafer trimming of high stability thin-film resistors, the AD587 provides outstanding performance at low cost. FEATURES

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AD

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HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gain —

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MOTOROLA

摩托罗拉

Silicon Diode Ultra Fast Switch

Features: ● Super Fast Switching Speed ● High Current Capability ● High Surge Current Capability ● Low Forward Voltage Drop ● High Reliability ● DO41 Type Package

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NTE

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS PPB1509GV is a divide by 2, 4, 8 prescaler IC for portable radio or cellular telephone applications. PPB1509GV is a shrink package version of PPB587G so that this small package contributes to reduce the mounting space. PPB1509GV is m

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NEC

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