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FRM234	文件：49.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FRM234D	文件：48.69 Kbytes Page：6 Pages	7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FRM234H	文件：48.69 Kbytes Page：6 Pages	7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FRM234R	文件：48.69 Kbytes Page：6 Pages	7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FRS234D	文件：49.8 Kbytes Page：6 Pages	5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FRS234H	文件：49.8 Kbytes Page：6 Pages	5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FRS234R	文件：49.8 Kbytes Page：6 Pages	5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSL234D	文件：46.03 Kbytes Page：8 Pages	4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSL234R	文件：46.03 Kbytes Page：8 Pages	4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSPYE234F	文件：79.62 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSPYE234R	文件：79.62 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSS234	文件：29.28 Kbytes Page：4 Pages	DC/DCConverterApplications Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching.	SANYOSanyo 三洋三洋电机株式会社	SANYO
FSS234D	文件：45.39 Kbytes Page：8 Pages	6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSS234R	文件：45.39 Kbytes Page：8 Pages	6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FT234XD	文件：1.20141 Mbytes Page：40 Pages	SinglechipUSBtoasynchronousserialdatatransferinterface	FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd	FTDI
FT234XD	文件：695.44 Kbytes Page：37 Pages	TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures	FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd	FTDI
FT234XDR	文件：695.44 Kbytes Page：37 Pages	TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures	FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd	FTDI
FT234XD-R	文件：695.44 Kbytes Page：37 Pages	USBtoBASICUARTIC	FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd	FTDI
FT234XD-X	文件：695.44 Kbytes Page：37 Pages	TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures	FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd	FTDI
FX234	文件：8.07944 Mbytes Page：10 Pages	VSBAudioScrambler	CMLMICROCML Microcircuits CML公司	CMLMICRO

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详细参数

型号：
AD234AN
制造商：
Rochester Electronics LLC
功能描述：
- Bulk
制造商：
Analog Devices

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	AD234AN		23+	N/A	85600	正品授权货源可靠	询价
深圳市澳亿芯电子科技有限公司	AD234AN	ADI	9113	DIP	150	普通	询价
深圳市大联智电子有限公司	AD234AN	原厂	2022+	进口原装	5960	授权分销商-好价格好质量就在铭昌源科技!	询价
深圳市佳鑫美电子科技有限公司	AD234AQ	AMD	22+	CDIP16	3629	原装优势!房间现货!欢迎来电!	询价
深圳市一线半导体有限公司	AD234AR			SOP	280		询价
鑫勃源（上海北京青岛）有限公司	AD234J	AD	23+	22UF/12.5V	18000		询价
深圳市毅创腾电子科技有限公司	AD234J	AnalogDevices		MODEL	1200	AD代理旗下一级分销商,主营AD全系列产品	询价
深圳市博浩通科技有限公司	AD234J	AD	23+	原厂原装	1003	优势库存	询价
齐创科技(上海,北京,青岛)有限公司	AD234J	AD	23+	DIP	5000	原装正品,假一罚十	询价
深圳市欧立现代科技有限公司	AD234J	AD	22+	原厂封装	6980	原装现货,可开13%税票	询价

更多AD234AN供应商更新时间2024-5-22 11:36:00

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