20V Complementary Enhancement Mode Field Effect Transistor

Description The ACE634 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features • N-Channel    VDS(V)=20V    ID=4A    RDS(ON)      

文件：1.02993 Mbytes 页数：9 Pages

ACE

N-Channel Enhancement Mode Field Effect Transistor

Description The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features • VDS(V)=30V • ID=43A (VGS=10V) • RDS(ON)

文件：949.1 Kbytes 页数：8 Pages

ACE

N-Channel 100-V MOSFET

文件：691.14 Kbytes 页数：7 Pages

ACE

Ultra Low Dropout 2A CMOS LDO

文件：491.5 Kbytes 页数：8 Pages

ACE

Ultra Low Dropout 2A CMOS LDO

文件：491.5 Kbytes 页数：8 Pages

ACE

Ultra Low Dropout 2A CMOS LDO

文件：491.5 Kbytes 页数：8 Pages

ACE

Ultra Low Dropout 2A CMOS LDO

文件：491.5 Kbytes 页数：8 Pages

ACE

Ultra Low Dropout 2A CMOS LDO

文件：491.5 Kbytes 页数：8 Pages

ACE

Ultra Low Dropout 2A CMOS LDO

文件：491.5 Kbytes 页数：8 Pages

ACE

Ultra Low Dropout 2A CMOS LDO

文件：491.5 Kbytes 页数：8 Pages

ACE