20V Complementary Enhancement Mode Field Effect Transistor

Description The ACE634 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features • N-Channel    VDS(V)=20V    ID=4A    RDS(ON)      

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N and P-Channel Enhancement Mode MOSFET

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20V Complementary Enhancement Mode Field Effect Transistor

Description\nThe ACE634 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. • N-Channel\n• P-Channel\n   VDS(V)=-20V\n   ID=-2.5A\n   RDS(ON)\n      <85mΩ (VGS=-4.5V)\n      <115mΩ (VGS=-2.5V) ;

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N and P-Channel Enhancement Mode MOSFET

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