P-Channel Enhancement Mode Field Effect Transistor

Description The ACE5807B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Standard Product ACE5807B is Pb-free. Features • VDS (V) = -12V • ID= -16A • RDS(ON)  

文件：598.75 Kbytes 页数：6 Pages

ACE

P-Channel Enhancement Mode Field Effect Transistor

Description The ACE5807B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Standard Product ACE5807B is Pb-free. Features • VDS (V) = -12V • ID= -16A • RDS(ON)  

文件：598.75 Kbytes 页数：6 Pages

ACE

MOSFET

ACE ele

Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

文件：1.09198 Mbytes 页数：71 Pages

TI

德州仪器

Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 1.05 nV/rtHz, 12-Bit, 80 MSPS, 117 mW/CH

文件：1.16731 Mbytes 页数：75 Pages

TI

德州仪器

AFE5816 16-Channel Ultrasound AFE With 90mW/Channel Power, 1nV/√ Hz Noise, 14-Bit, 65-MSPS or 12-Bit, 80 MSPS ADC and Passive CW Mixer

1 Features • 16-channel, AFE for ultrasound applications: – Input attenuator, LNA, LPF, ADC, and CW mixer – Optimized signal chains for TGC and CW modes – Digital time gain compensation (DTGC) – Total gain range: 6dB to 45dB – Linear input range: 1VPP • Input attenuator with DTGC: – 8dB

文件：458.96 Kbytes 页数：6 Pages

TI

德州仪器