ACE4443B

P-Channel Enhancement Mode Field Effect Transistor

Description TheACE4443BusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features •VDS(V)=-40V •ID=-6A(VGS=-10V) •RDS(ON)

AN4443

Fail-safefeatureoftheRHFLVDS32AandRHFLVDSR2D2

AO4443

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

AO4443

40VP-ChannelMOSFET

GeneralDescription TheAO4443combinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. ProductSummary VDS-40V ID(

AO4443

40VP-ChannelMOSFET

AO4443

P-ChannelMOSFET

■Features ●VDS(V)=-40V ●ID=-6.5A(VGS=-10V) ●RDS(ON)

AO4443

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4443usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO4443isPb-free(meetsROHS&Sony259specifications).AO4443LisaGreenPr

AO4443

-40VP-ChannelEnhancementModeMOSFET

Description TheAO4443usesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas2.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-40VID=-8A RDS(ON)

AO4443

-40VP-ChannelEnhancementModeMOSFET

GeneralFeatures VDS=-40VID=-8A RDS(ON)

AO4443-HF

P-ChannelMOSFET

■Features ●VDS(V)=-40V ●ID=-6.5A(VGS=-10V) ●RDS(ON)