P-Channel Enhancement Mode Field Effect Transistor

Description The ACE4443B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features • VDS(V)=-40V • ID=-6A (VGS=-10V) • RDS(ON)

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ACE

P-Channel Enhancement Mode Field Effect Transistor

Description\nThe ACE4443B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. • VDS(V)=-40V\n• ID=-6A (VGS=-10V)\n• RDS(ON)＜40mΩ (VGS=-10V)\n• RDS(ON)＜80mΩ (VGS=-4.5V);

ACE ele

Fail-safe feature of the RHFLVDS32A and RHFLVDSR2D2

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STMICROELECTRONICS

意法半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4443 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4443 is Pb-free (meets ROHS & Sony 259 specifications). AO4443L is a Green Pr

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AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-6.5 A (VGS =-10V) ● RDS(ON)

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KEXIN

科信电子