P-Channel Enhancement Mode Field Effect Transistor

Description The ACE4409B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features • VDS(V)=-30V • ID=-14A (VGS=-10V) • RDS(ON)

文件：1.10063 Mbytes 页数：6 Pages

ACE

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

文件：1.36834 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

文件：1.36834 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFET

ACE ele