ACE4102E

2.5A, 3MHz Switching Charger with Dynamic Power Path Management

ACMD-4102

UMTS/NCDMA/Co-bandGSMRxBand2Duplexer

AM4102

N-CHANNELENHANCEMENTMODEPOWERMOSFET

DESCRIPTION TheAM4102usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. AM4102isavailableinaTO252-2package. FEATURES VDS=30V,ID=50A RDS(ON)

AM4102DR

N-CHANNELENHANCEMENTMODEPOWERMOSFET

DESCRIPTION TheAM4102usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. AM4102isavailableinaTO252-2package. FEATURES VDS=30V,ID=50A RDS(ON)

AM4102DVR

N-CHANNELENHANCEMENTMODEPOWERMOSFET

DESCRIPTION TheAM4102usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. AM4102isavailableinaTO252-2package. FEATURES VDS=30V,ID=50A RDS(ON)

AN4102

Introducingthelow-powerconceptinautomotiveapplicationsusingtheSTM8ALboardoftheSTM8A-DISCOVERY

AOD4102

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD4102/AOI4102usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications. ProductSummary VDS30V I

AOD4102

30VN-ChannelMOSFET

AOD4102

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=19A@TC=25℃ •DrainSourceVoltage- :VDSS=30V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=37mΩ(Max) •100avalanchetested •MinimumLot-to-Lot

AOD4102

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=19A,RDS(ON)