Dual N-Channel Enhancement Mode MOSFET

Description The ACE12322A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low vol

文件：483.83 Kbytes 页数：7 Pages

ACE

Dual N-Channel Enhancement Mode MOSFET

Description The ACE12322A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low vol

文件：483.83 Kbytes 页数：7 Pages

ACE

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