丝印：AC280M；Package：SOIC；9-Bit Odd/Even Parity Generator/Checker

Features • Buffered Inputs • Typical Propagation Delay - 10ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection per MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • B

文件：595.08 Kbytes 页数：17 Pages

TI

德州仪器

丝印：AC280M；Package：SOIC；9-Bit Odd/Even Parity Generator/Checker

Features • Buffered Inputs • Typical Propagation Delay - 10ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection per MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • B

文件：595.08 Kbytes 页数：17 Pages

TI

德州仪器

丝印：AC280M；Package：SOIC；9-Bit Odd/Even Parity Generator/Checker

Features • Buffered Inputs • Typical Propagation Delay - 10ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection per MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • B

文件：595.08 Kbytes 页数：17 Pages

TI

德州仪器

丝印：AC280M；Package：SOIC；9-Bit Odd/Even Parity Generator/Checker

Features • Buffered Inputs • Typical Propagation Delay - 10ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection per MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • B

文件：595.08 Kbytes 页数：17 Pages

TI

德州仪器