EGS1070FFG

MouldedCaseCircuitBreakers16-2500AmperesforIEC60947-2Applications

EPA1070

T1/CEPT/ISDN-PRICarrierInterfaceTransformers

F1070

PATENTEDGOLDMETALIZEDSILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

FBR1070

10AmpHighVoltageSCHOTTKYBARRIERRECTIFIERS

Features ■HIGHCURRENTCAPABILITYWITHLOWVF ■HIGHSURGEVOLTAGEANDTRANSIENTPROTECTION ■HIGHEFFICIENCYw/LOWPOWERLOSS ■MEETSULSPECIFICATION94V-0

FBR1070

10AmpHighVoltageSCHOTTKYBARRIERRECTIFIERS

[Fci] Features ■HIGHCURRENTCAPABILITYWITHLOWVF ■SUPERIORMETALPROCESS ■HIGHSURGEVOLTAGEANDTRANSIENTPROTECTION ■MEETSULSPECIFICATION94V-0

GEP-1070

10-PortL2ManagedGigabitPoESwitch,802.3atPoEplus,2xSFP,120W

GNP1070TC-Z

GaNEnhancementModePowerTransistor

Features ・5.2nCGateCharge ・Highswitchingfrequencyconverter ・Highdensityconverter Application ・650VE-modeGaNFET ・70mΩResistance

HCB1070

HCB1070Series

HT1070

VoltageRegulator

GeneralDescription TheHT10XXseriesisasetofthree-terminallowpowervoltageregulatorsimplementedinCMOS technology.Theyareavailablewithseveralfixedoutputvoltagesrangingfrom1.5V~7.0V.Thead vantageofCMOStechnologyislowvoltagedropoutandlowquiescentcurrent. Featu

IDSO1070

2CHWlanDigitalStorageOscilloscope